BUK7230-55A Datasheet, PDF (8/13 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7230-55A
TrenchMOS™ standard level FET
ID80
(A)
70
03na41
60
Tj = 25oC
50
40
Tj = 175oC
30
20
10
0
0
2
4
6
8
10
12
VGS (V)
V_DS = 25 V
Fig 13. Transfer characteristics; typical values.
10
VGS
(V) ₉
8
7
6
5
4
3
2
1
0
0
03na41
VDS= 14(V)
VDS= 44(V)
10
20 _{QG (nC)} 30
T_j = 25 °C; I_D = 25 A
Fig 14. Turn-on gate charge characteristics; typical
values.
IS100
(A) ₉₀
03na42
80
70
Tj = 175oC
60
50
40
30
Tj = 25oC
20
10
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD (V)
V_GS = 0 V
Fig 15. Reverse diode current; typical values.
9397 750 07568
Product specification
Rev. 01 — 29 September 2000
© Philips Electronics N.V. 2000. All rights reserved.
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