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BUK7230-55A Datasheet, PDF (2/13 Pages) NXP Semiconductors – TrenchMOS standard level FET
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Philips Semiconductors
BUK7230-55A
TrenchMOS™ standard level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
Conditions
Typ
VDS
drain-source voltage (DC)
−
ID
drain current (DC)
Tmb = 25 °C; VGS = 10 V
−
Ptot
total power dissipation
Tmb = 25 °C
−
Tj
junction temperature
−
RDSon drain-source on-state resistance
VGS = 10 V; ID = 25 A
26
Tj = 175°C
−
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 kΩ
Tmb = 25 °C; VGS = 5 V;
Figure 2 and 3
IDM
peak drain current
Tmb = 100 °C; VGS = 5 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
Figure 3
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
Source-drain diode
Tmb = 25 °C; Figure 1
IDR
reverse drain current (DC)
IDRM
pulsed reverse drain current
Avalanche ruggedness
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp ≤ 10 µs
WDSS non-repetitive avalanche energy
unclamped inductive load; ID = 34 A;
VDS ≤ 55 V; VGS = 10 V; RGS = 50 Ω;
starting Tj = 25°C
[1] IDM is limited by chip, not package.
Min
−
−
−
−
−
[1] −
−
−55
−55
−
−
−
Max Unit
55
V
38
A
88
W
175
°C
30
mΩ
60
mΩ
Max Unit
55
V
55
V
±20
V
38
A
27
A
150
A
88
W
+175 °C
+175 °C
38
A
150
A
58
mJ
9397 750 07568
Product specification
Rev. 01 — 29 September 2000
© Philips Electronics N.V. 2000. All rights reserved.
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