BUK7230-55A Datasheet, PDF (6/13 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
Table 5: Characteristics…continued
T_j = 25 °C unless otherwise specified
Symbol Parameter
Source-drain diode
V_SD
source-drain (diode forward)
voltage
t_rr
reverse recovery time
Q_r
recovered charge
Conditions
I_S = 25 A; V_GS = 0 V;
Figure 15
I_S = 25 A;dI_S/dt = −100 A/µs
V_GS = −10 V; V_DS = 30 V
BUK7230-55A
TrenchMOS™ standard level FET
Min
Typ
Max
Unit
−
0.85
1.2
V
−
40
−
ns
−
100
−
nC
ID ¹⁶⁰
(A)
140
120
100
80
60
40
20
0
0
VGS = 20 (V)
16
03na46
12
10
9
8
7
6
4.5
2
4
6
8
10
VDS(V)
RDSon ⁵⁵
(mOhm)
50
45
40
35
30
25
20
15
10
5
03na44
10
15 _{VGS (V)} 20
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 6. On-state resistance: typical values.
RDSon ⁷⁰
(mOhm)
65
VGS(V) = 6
03na47
60
6.5
55
7
50
45
8
40
35
9
30
10
25
20
0
10 20 30 40 50 60 70 80 90
ID (A)
T_j = 25°C_;
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
2.2
a
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -20 20
03aa28
60 100 140 180
Tj (oC)
a = -------^R----^D----^S--^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain source on-state resistance
factor as a function of junction temperature.
9397 750 07568
Product specification
Rev. 01 — 29 September 2000
© Philips Electronics N.V. 2000. All rights reserved.
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