BUK7222-55A Datasheet, PDF (8/13 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7222-55A
TrenchMOS™ standard level FET
120
ID
(A)
100
80
60
40
20
03nc61
Tj = 25 ^oC
Tj = 175 ^oC
10
VGS
(V)
8
6
VDD = 14 V
4
2
03nc59
VDD = 44 V
0
0
2
4
6
8
10
VGS (V)
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
0
0
10
20
30 _{QG (nC)} 40
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
120
IS
(A) ₁₀₀
03nc58
80
Tj = 175 ^oC
60
Tj = 25 ^oC
40
20
0
0.0
0.5
1.0 _{VSD (V)} 1.5
V_GS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 08221
Product specification
Rev. 01 — 17 April 2001
© Philips Electronics N.V. 2001. All rights reserved.
8 of 13