BUK7222-55A Datasheet, PDF (6/13 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
Table 5: Characteristics…continued
T_j = 25 °C unless otherwise specified
Symbol Parameter
Source-drain diode
V_SD
source-drain (diode forward)
voltage
t_rr
reverse recovery time
Q_r
recovered charge
Conditions
I_S = 20 A; V_GS = 0 V;
Figure 15
I_S = 20 A; dI_S/dt = −100 A/µs
V_GS = −10 V; V_DS = 30 V
BUK7222-55A
TrenchMOS™ standard level FET
Min
Typ
Max
Unit
−
0.85
1.2
V
−
45
−
ns
−
110
−
nC
200
ID
(A) ¹⁸⁰
160
140
03nc63
VGS (V) =
20
14
12
11
10
120
9.0
100
8.5
8.0
80
7.5
7.0
60
6.5
40
6.0
20
5.5
5.0
0
4.5
0
2
4
6
8
10
VDS (V)
30
RDSon
(mΩ)
25
03nc62
20
15
10
5
10
15
20
25
VGS (V)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
45
RDSon
(mΩ)
40
5.5 6 6.5 7
35
30
25
20
15
0
50
03nc64
8 ^{VGS (V) = 10}
100
150
ID (A)
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
2.2
a
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60
-20
20
03ne89
60 100 140 180
Tj (oC)
a = -------^R----^D----^S--^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain source on-state resistance
factor as a function of junction temperature.
9397 750 08221
Product specification
Rev. 01 — 17 April 2001
© Philips Electronics N.V. 2001. All rights reserved.
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