BUK662R4-40C_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS FET

NXP Semiconductors
BUK662R4-40C
N-channel TrenchMOS FET
4
V_GS(th)
(V)
3
003aae542
max @1mA
2
typ @1mA
min @2.5mA
1
0
-60
0
60
120
180
T_j (°C)
10^-1
I_D
(A)
10^-2
10^-3
10^-4
10^-5
10^-6
0
003aad806
min typ max
1
2
3
4
V_GS (V)
Fig 9. Gate-source threshold voltage as a function of Fig 10. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
12
R_DSon
(mΩ)
9
003aae704
3.4 3.6 3.8 V_GS (V) = 4.0
2.5
a
2
003aad793
1.5
6
1
4.5
3
5.0
0.5
10.0
0
0
100
200
300
I_D (A)
0
-60
0
60
120
180
T_j (°C)
Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
BUK662R4-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 November 2010
© NXP B.V. 2010. All rights reserved.
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