BUK662R4-40C_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS FET

NXP Semiconductors
BUK662R4-40C
N-channel TrenchMOS FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 16
t_rr
reverse recovery time I_S = 20 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 25 V
Min Typ Max Unit
-
0.8 1.2 V
-
60
-
ns
-
104 -
nC
200
g_fs
(S)
160
120
80
40
0
0
003aae582
10
20
30
40
I_D (A)
250
I_D
(A)
200
150
100
50
0
0
003aae597
Tj = 175 °C
Tj = 25 °C
2
4 _VGS(V) 6
Fig 5. Forward transconductance as a function of
drain current; typical values
250
I_D
10.0 5.0 4.5
(A)
200
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V_GS(V) = 4.0
150
3.8
100
3.6
3.4
50
3.2
0
0
0.5
1
1.5 _VDS(V) 2
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
10
R_DSon
(mΩ)
8
003aae703
6
4
2
0
0
5
10
15
20
V_GS (V)
Fig 7. Output characteristics: drain current as a
Fig 8. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values.
BUK662R4-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 November 2010
© NXP B.V. 2010. All rights reserved.
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