BUK662R4-40C_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS FET

NXP Semiconductors
240
I_D
(A)
180
003aac798
120
(1)
60
0
0
50
100
150
200
T_mb (°C)
BUK662R4-40C
N-channel TrenchMOS FET
120
P_der
(%)
80
03na19
40
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
10⁴
I_D
(A)
10³
10²
Limit R_DSon = V_DS/ I_D
10
1
10^-1
10^-1
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aae575
DC
10
10 μ s
100 μ s
10 ms
100 ms
10²
V _DS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK662R4-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 November 2010
© NXP B.V. 2010. All rights reserved.
4 of 14