BUK653R3-30C_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK653R3-30C
N-channel TrenchMOS intermediate level FET
10^-1
I_D
(A)
10^-2
10^-3
10^-4
10^-5
10^-6
0
003aad806
min typ max
1
2
3
4
V_GS (V)
4
V_GS(th)
(V)
3
003aae542
max @1mA
2
typ @1mA
min @2.5mA
1
0
-60
0
60
120
180
T_j (°C)
Fig 9. Sub-threshold drain current as a function of
gate-source voltage
2
a
03aa27
1.5
Fig 10. Gate-source threshold voltage as a function of
junction temperature
12
R_DSon
(mΩ)
9
V_GS (V) = 3.8
003aae536
4
1
0.5
0
−60
0
60
120 _{Tj (°C)} 180
6
3
0
0
40
80
T_j = 25°C; t_p = 300 µs
4.5
5
6
8 ₁₀
120
160
I_D (A)
Fig 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 12. Drain-source on-state resistance as a function
of drain current; typical values
BUK653R3-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 July 2011
© NXP B.V. 2011. All rights reserved.
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