BUK653R3-30C_15 Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK653R3-30C
N-channel TrenchMOS intermediate level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V_DS
V_GS
Parameter
drain-source voltage
gate-source voltage
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
DC
Pulsed
I_D
drain current
I_DM
peak drain current
T_mb = 25 °C; V_GS = 10 V; see Figure 1
T_mb = 100 °C; V_GS = 10 V; see Figure 1
T_mb = 25 °C; pulsed; t_p ≤ 10 µs;
see Figure 3
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
T_mb = 25 °C; see Figure 2
I_S
source current
I_SM
peak source current
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-source
avalanche energy
E_DS(AL)R
repetitive drain-source
avalanche energy
T_mb = 25 °C
pulsed; t_p ≤ 10 µs; T_mb = 25 °C
I_D = 100 A; V_sup ≤ 30 V; R_GS = 50 Ω;
V_GS = 10 V; T_j(init) = 25 °C; unclamped
Min
-
[1] _-16
[2] _-20
[3] _-
[3] _-
-
-
-55
-55
[3] _-
-
-
[4][5][6] _-
[1] -16V accumulated duration not to exceed 168 hrs
[2] Accumulated pulse duration not to exceed 5mins.
[3] Continuous current is limited by package.
[4] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[5] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[6] Refer to application note AN10273 for further information.
Max Unit
30 V
16 V
20 V
100 A
100 A
721 A
204 W
175 °C
175 °C
100 A
721 A
501 mJ
-
J
BUK653R3-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 July 2011
© NXP B.V. 2011. All rights reserved.
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