BUK653R3-30C_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK653R3-30C
N-channel TrenchMOS intermediate level FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 16
t_rr
reverse recovery time I_S = 20 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 25 V
Min Typ Max Unit
-
0.8 1.2 V
-
50
-
ns
-
73
-
nC
150
g_fs
(S)
120
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90
60
30
0
0
30
60
90
120
150
I_D (A)
T_j = 25°C; V_DS = 25 V
Fig 5. Forward transconductance as a function of
drain current; typical values
200
V_GS (V) = 10 6 5
4.5
I_D
(A)
150
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4
100
3.8
50
3.6
3.4
3.2
0
0
0.5
1
1.5
2
V_DS (V)
Fig 6.
T_j = 25°C and t_p = 300 us
Output characteristics: drain current as a
function of drain-source voltage; typical values
120
I_D
(A)
80
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12
R_DSon
(mΩ)
9
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6
T_j = 175 °C
40
3
T_j = 25 °C
0
0
1
2
3 _{VGS (V)} 4
Fig 7.
V_DS = 25 V
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
0
5
10
15
20
V_GS (V)
Fig 8.
T_j = 25°C; I_D 25 A
Drain-source on-state resistance as a function
of gate-source voltage; typical values
BUK653R3-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 July 2011
© NXP B.V. 2011. All rights reserved.
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