BUJD203A_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – NPN power transistor with integrated diode

NXP Semiconductors
BUJD203A
NPN power transistor with integrated diode
1.4
V_BEsat
(V)
1.2
1.0
0.8
0.6
0.4
0.2
0
10^−1
001aab996
10²
h_FE
T_j = 25 °C
10
001aab994
V_CE = 5 V
1V
1
10
I_C (A)
1
10^−2
10^−1
1
10
I_C (A)
Fig 10. Base-emitter saturation voltage as a function of Fig 11. DC current gain as a function of collector
collector current; typical values
current; typical values
V_IM
0
t_p
T
V_CC
R_L
R_B
DUT
001aab989
Fig 12. Test circuit for resistive load switching
I_C
90 %
I_Con
90 %
I_B
t_on
t_s
t_off
I_Bon
10 %
t
t_f
10 %
t_r ≤ 30 ns
−I_Boff
t
001aab990
Fig 13. Switching times waveforms for resistive load
BUJD203A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 2 December 2010
© NXP B.V. 2010. All rights reserved.
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