BUJD203A_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – NPN power transistor with integrated diode

NXP Semiconductors
BUJD203A
NPN power transistor with integrated diode
Table 6.
Symbol
t_f
Characteristics …continued
Parameter
Conditions
fall time
I_C = 2.5 A; I_Bon = 0.5 A; I_Boff = -0.5 A;
R_L = 75 Ω; T_j = 25 °C; resistive load;
see Figure 12; see Figure 13
I_C = 2 A; I_Bon = 0.4 A; V_BB = -5 V;
L_B = 1 µH; T_j = 100 °C; inductive load;
see Figure 14; see Figure 15
I_C = 2 A; I_Bon = 0.4 A; V_BB = -5 V;
L_B = 1 µH; T_j = 25 °C; inductive load;
see Figure 14; see Figure 15
[1] Measured with half-sine wave voltage (curve tracer)
Min Typ Max Unit
-
0.3 0.35 µs
-
-
0.12 µs
-
0.03 0.06 µs
6V
30 Hz to 60 Hz
300 Ω
50 V
100 Ω to 200 Ω
horizontal
oscilloscope
vertical
1Ω
001aab987
Fig 6. Test circuit for collector-emitter sustaining
voltage
2.0
V_CEsat
(V)
I_C = 1 A 2 A 3 A 4 A
1.6
001aab995
1.2
0.8
0.4
0
10^−2
10^−1
1
10
I_B (A)
I_C
(mA)
250
100
10
0
min _{VCE (V)}
V_CEOsus
001aab988
Fig 7. Oscilloscope display for collector-emitter
sustaining voltage test waveform
V_CEsat
(V) 0.5
001aab997
0.4
0.3
0.2
0.1
0
10^−1
1
10
I_C (A)
Fig 8. Collector-emitter saturation voltage as a
function of base current; typical values
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
BUJD203A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 2 December 2010
© NXP B.V. 2010. All rights reserved.
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