BUJD203A_15 Datasheet, PDF (3/14 Pages) NXP Semiconductors – NPN power transistor with integrated diode

NXP Semiconductors
BUJD203A
NPN power transistor with integrated diode
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_CESM
V_CBO
V_CEO
I_C
collector-emitter peak voltage
collector-base voltage
collector-emitter voltage
collector current
V_BE = 0 V
I_E = 0 A
I_B = 0 A
DC; see Figure 1; see Figure 2;
see Figure 4
I_CM
peak collector current
see Figure 1; see Figure 2; see Figure 4
I_B
base current
DC
I_BM
peak base current
P_tot
total power dissipation
T_mb ≤ 25 °C; see Figure 3
T_stg
storage temperature
T_j
junction temperature
Min Max Unit
-
850 V
-
850 V
-
425 V
-
4
A
-
8
A
-
2
A
-
4
A
-
80 W
-65 150 °C
-
150 °C
10
I_C
(A)
8
001aac000
6
4
2
0
0
200
400
600
800
1000
V_CEclamp (V)
V_CC
L_C
V_CL(CE)
probe point
I_Bon
L_B
V_BB
DUT
001aab999
Fig 1. Reverse bias safe operating area
Fig 2. Test circuit for reverse bias safe operating area
BUJD203A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 2 December 2010
© NXP B.V. 2010. All rights reserved.
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