BFG67 Datasheet, PDF (8/16 Pages) NXP Semiconductors – NPN 8 GHz wideband transistors

Philips Semiconductors
NPN 8 GHz wideband transistors
Product specification
BFG67; BFG67/X; BFG67/XR
BFG67/X
f
(MHz)
1 000
V_CE
(V)
8
I_C
(mA)
5
Noise Parameters
F_min
(dB)
1.3
Gamma (opt)
(mag) (ang)
0.375 65.9
R_n/50
0.304
BFG67/X
f
(MHz)
2 000
V_CE
(V)
8
I_C
(mA)
5
Noise Parameters
F_min
(dB)
2.2
Gamma (opt)
(mag) (ang)
0.391 136.5
R_n/50
0.184
Average Gain Parameters
G_MAX
(dB)
12
Gamma (max)
(mag)
0.839
(ang)
−170
1998 Oct 02
stability
circle
1
0.5
2
0.2
+j
0
−j
0.2
0.2
0.5
Fmin=1.3 dB
OPT
1
2
2 dB
3 dB
4 dB
5
10
5 10
∞
10
5
Z_O = 50 Ω.
0.5
1
2
MBB316
Fig.14 Noise circle figure.
1
0.5
2
0.2
+j
0
–j
0.2
G _max
Fmin=2.2 dB
4 dB
5
3 dB
OPT
5 dB
10
0.5
1
2
5 10
∞
=12dB _{11 dB 10 dB}
10
9 dB
0.2
5
8 dB
Z_O = 50 Ω.
0.5
1
2
MBB315
Fig.15 Noise circle figure.
8