BFG67 Datasheet, PDF (6/16 Pages) NXP Semiconductors – NPN 8 GHz wideband transistors

Philips Semiconductors
NPN 8 GHz wideband transistors
Product specification
BFG67; BFG67/X; BFG67/XR
handbook,⁵h⁰alfpage
gain
(dB)
40
30
20
10
MBB305
G _UM
MSG
G _max
0
10
10²
10³ _{f (MHz)} 10⁴
V_CE = 8 V; I_C = 5 mA.
G_UM = maximum unilateral power gain;
MSG = maximum stable gain;
G_max = maximum available gain.
Fig.8 Gain as a function of frequency.
handbook,⁵h⁰alfpage
gain
(dB)
40
30
20
10
MBB306
G _UM
MSG
G _max
0
10
10²
10³ _{f (MHz)} 10⁴
V_CE = 8 V; I_C = 15 mA.
G_UM = maximum unilateral power gain;
MSG = maximum stable gain;
G_max = maximum available gain.
Fig.9 Gain as a function of frequency.
handbook,⁵h⁰alfpage
gain
(dB)
40
30
20
10
G _UM
MSG
MBB307
G _max
0
10
10²
10³ _{f (MHz)} 10⁴
V_CE = 8 V; I_C = 30 mA.
G_UM = maximum unilateral power gain;
MSG = maximum stable gain;
G_max = maximum available gain.
Fig.10 Gain as a function of frequency.
1998 Oct 02
4
handbook, halfpage
F
(dB)
3
2
MBB308
f = 2 GHz
1 GHz
900 MHz
500 MHz
1
0
1
10
100
IC (mA)
V_CE = 8 V.
Fig.11 Minimum noise figure as a function of
collector current.
6