BFG67 Datasheet, PDF (4/16 Pages) NXP Semiconductors – NPN 8 GHz wideband transistors

Philips Semiconductors
NPN 8 GHz wideband transistors
Product specification
BFG67; BFG67/X; BFG67/XR
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
h_FE
f_T
C_c
C_e
C_re
G_UM
F
collector leakage current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power
gain; note 1
noise figure
V_CB = 5 V; I_E = 0
I_C = 15 mA; V_CE = 5 V
I_C = 15 mA; V_CE = 8 V; f = 500 MHz
I_E = i_e = 0; V_CB = 8 V; f = 1 MHz
I_C = i_c = 0; V_EB = 0.5 V; f = 1 MHz
I_C = i_c = 0; V_CB = 8 V; f = 1 MHz
I_C = 15 mA; V_CE = 8 V;
T_amb = 25 °C; f = 1 GHz
I_C = 15 mA; V_CE = 8 V;
T_amb = 25 °C; f = 2 GHz
Γ_s = Γ_opt; I_C = 5 mA; V_CE = 8 V
T_amb = 25 °C; f = 1 GHz
Γ_s = Γ_opt; I_C = 15 mA; V_CE = 8 V;
T_amb = 25 °C; f = 1 GHz
I_C = 5 mA; V_CE = 8 V;
T_amb = 25 °C; f = 2 GHz; Z_S = 60 Ω
I_C = 15 mA; V_CE = 8 V;
T_amb = 25 °C; f = 2 GHz; Z_S = 60 Ω
MIN.
−
60
−
−
−
−
−
TYP.
−
100
8
0.7
1.3
0.5
17
MAX.
50
−
−
−
−
−
−
UNIT
nA
GHz
pF
pF
pF
dB
−
10
−
dB
−
1.3
−
dB
−
1.7
−
dB
−
2.5
−
dB
−
3
−
dB
Note
1. G_UM is the maximum unilateral power gain, assuming S₁₂ is zero and G_UM
=
10
log --₍--1-----_–------S----₁---₁----S₂---₎-²---¹₍---1-²----_–------S----₂--₂-----₂---₎-
dB.
1998 Oct 02
4