BFC505 Datasheet, PDF (8/11 Pages) NXP Semiconductors – NPN wideband cascode transistor

Philips Semiconductors
NPN wideband cascode transistor
Product specification
BFC505
APPLICATION INFORMATION
SPICE parameters for any single BFC505 die
SEQUENCE No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19⁽¹⁾
20⁽¹⁾
21⁽¹⁾
22
23
24
25
26
27
28
29
30
31
32
33
34
35⁽¹⁾
36⁽¹⁾
37⁽¹⁾
38
PARAMETER
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJC
TR
CJS
VJS
MJS
FC
VALUE UNIT
134.1 aA
180.0 −
0.988 −
38.34 V
150.0 mA
27.81 fA
2.051 −
55.19 −
0.982 −
2.459 V
2.920 mA
17.45 aA
1.062 −
20.00 Ω
1.000 µA
20.00 Ω
1.171 Ω
4.350 Ω
0.000 −
1.110 eV
3.000 −
284.7 fF
600.0 mV
0.303 −
7.037 ps
12.34 −
1.701 V
30.64 mA
0.000 deg
242.4 fF
188.6 mV
0.041 −
0.130 −
1.332 ns
0.000 F
750.0 mV
0.000 −
0.897 −
Note
1. These parameters have not been extracted, the
default values are shown.
handbook, halfpage
B2
LP
LB2
B1
LP
LB1
LP
C2
T2
LE2
LP
T1
LE1
C1/E2
LP
E1
MBG216
Fig.10 Package equivalent circuit SOT353A
(inductance only).
Lead and mutual inductances (nH)
LP
0.4
M(LB1,LE1) +0.4
LB1,2 0.5
M(LB1,LE2) +0.25
LE1,2 0.8
E1 35
B2 3.5 35
C2 2 35 36
C1/E2 36 35 2 15
MBG217
B1 E1 B2 C2
Fig.11 Package capacitance (fF) between
indicated nodes.
1996 Oct 08
8