BFC505 Datasheet, PDF (2/11 Pages) NXP Semiconductors – NPN wideband cascode transistor

Philips Semiconductors
NPN wideband cascode transistor
Product specification
BFC505
FEATURES
• Small size
• High power gain at low bias current and high
frequencies
• High reverse isolation
• Low noise figure
• Gold metallization ensures excellent reliability
• Minimum operating voltage V_C2−E1 = 1 V.
PINNING - SOT353
PIN
SYMBOL
DESCRIPTION
1
b₂
base 2
2
e₁
emitter 1
3
b₁
base 1
4
c₁/e₂ collector 1/emitter 2
5
c₂
collector 2
APPLICATIONS
• Low voltage, low current, low noise and high gain
amplifiers
• Oscillator buffer amplifiers
• Wideband voltage-to-current converters.
DESCRIPTION
Cascode amplifier with two discrete dies in a surface
mount, 5-pin SOT353 (S-mini) package. The amplifier is
primarily intended for low power RF communications
equipment, such as pagers and has a very low feedback
capacitance resulting in high isolation.
handbook, halfpage
5
4
123
Top view
c2
b2
c1/e2
b1
e1
MAM212
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
b₂ connected to ground via 1 nF (0603) capacitor, e₁ connected directly to ground.
SYMBOL
PARAMETER
CONDITIONS
MIN.
C_re
feedback capacitance C_B1−C2 I_e = 0; V_C2-E1 = 0; f = 1 MHz
−
s₂₁ ⁄ s₁₂ ^{2 maximum isolation}
I_C = 5 mA; V_C2 = V_B2 = 3 V;
60
f = 900 MHz
MSG
maximum stable power gain I_C = 0.5 mA; V_C2 = V_B2 = 1 V;
−
f = 900 MHz; T_amb = 25 °C
F
noise figure
I_C = 0.5 mA; V_C2-E1 = 1 V;
−
f = 500 MHz; Γ_S = Γ_opt
I_C = 1 mA; V_C2-E1 = 3 V;
−
f = 900 MHz; Γ_S = Γ_opt
R_{th j-s}
thermal resistance from
single loaded
−
junction to soldering point
double loaded
−
TYP.
−
−
22
1.1
1.8
−
−
MAX.
10
−
−
1.4
2.1
230
115
UNIT
fF
dB
dB
dB
dB
K/W
K/W
1996 Oct 08
2