BFC505 Datasheet, PDF (6/11 Pages) NXP Semiconductors – NPN wideband cascode transistor

Philips Semiconductors
NPN wideband cascode transistor
Product specification
BFC505
handbook, h⁶alfpage
F
(dB)
4
2
IC = 0.25 mA
MGG213
1 mA
0
10^−1
1
f (GHz)
10
V_C2-E1 = 1 V.
Fig.4 Minimum noise figure as a function of
frequency; typical values.
handbook, h⁶alfpage
F
(dB)
4
2
0
10^−1
MGG214
f = 900 MHz
500 MHz
1
IC (mA)
10
V_C2-E1 = 1 V.
Fig.5 Minimum noise figure as a function of
collector current; typical values.
50
handbook, halfpage
MSG
(dB)
(1)
40
(2)
(3)
30
20
MGG215
100
S21/S12
(dB)
80
40
handbook, halfpage
MSG
(dB)
30
60
20
40
MGG216
80
S21/S12
(1)
(dB)
60
(2)
(3)
40
10
10
20
10²
10³ _{f (MHz)} 10⁴
(1) I_C = 5 mA; V_C2−E1 = 3 V.
(2) I_C = 1 mA; V_C2−E1 = 1 V.
(3) I_C = 0.5 mA; V_C2−E1 = 1 V.
Fig.6 Maximum stable gain and isolation as
functions of frequency; typical values.
1996 Oct 08
10
10^−1
20
1
IC (mA)
10
(1) V_C2−E1 = 1 V; f = 500 MHz.
(2) V_C2−E1 = 1 V; f = 900 MHz.
(3) V_C2−E1 = 3 V; f = 2 GHz.
Fig.7 Maximum stable gain and isolation as
functions of collector current; typical values.
6