PZ1418B30U Datasheet, PDF (7/16 Pages) NXP Semiconductors – NPN microwave power transistors

Philips Semiconductors
NPN microwave power transistors
Product specification
PZ1418B30U; PZ1721B25U;
PZ2024B20U
PZ1721B25U
Microwave performance up to T_mb = 25 °C in a common base class B wideband amplifier.
TYPE
f
V_CC
P_L
G_p
η_C
NUMBER
(GHz)
(V)
(W)
(dB)
(%)
PZ1721B25U
1.7 to 2.1
28
≥25
typ. 30
≥7
typ. 7.8
≥35
typ. 44
Z_i; Z_L
(Ω)
see Figs 11 and 12
handbook, full pagewidth
,,,,,, ,,,,, _input
,,,,,,,,,,,, ,,,,,,,,,,, ^50Ω
25
4
3 323 5 2
0.65
4
10 10 5
output
50 Ω
0.65
5
4
100 pF
(ATC) MGK063
Dimensions in mm.
Substrate: Epsilam printed-circuit board.
Thickness: 0.635 mm.
Permittivity: ε_r = 10.
Fig.8 Wideband test circuit board for 1.7 to 2.1 GHz operation (PZ1721B25U).
40
handbook, halfpage
PL
(W)
20
MGL008
35
(1)
PL
(2)
(W)
(3)
25
MGL014
PL
η_C
(%)
50
η_C
40
0
0
2
4
6
Pi (W)
Class-B operation; V_CC = 28 V; T_mb = 25 °C.
(1) 1.7 GHz.
(2) 1.9 GHz.
(3) 2.1 GHz.
Fig.9 Load power as a function of input power;
typical values for PZ1721B25U.
1997 Feb 19
1.7
1.8
VSWR
1.9
2.0
VSWR
2
1
2.1
2.2
f (GHz)
Class-B operation; V_CC = 28 V; T_mb = 25 °C; P_i = 5 W.
Fig.10 Load power, efficiency and VSWR as
functions of frequency; typical values
for PZ1721B25U.
7