PZ1418B30U Datasheet, PDF (4/16 Pages) NXP Semiconductors – NPN microwave power transistors

Philips Semiconductors
NPN microwave power transistors
Product specification
PZ1418B30U; PZ1721B25U;
PZ2024B20U
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-mb}
R_{th mb-h}
thermal resistance from junction to mounting-base T_j = 75 °C
thermal resistance from mounting-base to heatsink T_j = 75 °C; note 1
Note
1. See “Mounting recommendations in the General part of handbook SC15”.
MAX.
2.2
0.2
UNIT
K/W
K/W
CHARACTERISTICS
T_mb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_CES
collector cut-off current
I_EBO
emitter cut-off current
CONDITIONS
V_CB = 40 V; I_E = 0
V_CB = 30 V; I_E = 0
V_CE = 35 V; R_BE = 0
V_EB = 1.5 V; I_C = 0
MAX.
10
5
50
200
UNIT
mA
mA
mA
µA
APPLICATION INFORMATION
PZ1418B30U
Microwave performance up to T_mb = 25 °C in a common base class B wideband amplifier.
TYPE
f
V_CC
NUMBER
(GHz)
(V)
PZ1418B30U
1.4 to 1.8
28
P_L
(W)
≥27
typ. 35
G_p
(dB)
≥7.3
typ. 8.4
η_C
(%)
≥38
typ. 45
Z_i; Z_L
(Ω)
see Figs 6 and 7
handbook, full pagewidth
24
5
5 2 5.5 2
,,,,, ,,,,,,,,,, _input
,,,,,,,,,, _{,,,,,,,,,,,,,,,,} ^50Ω
0.65
6.5
12 21 4
0.65
100 pF
(ATC)
8.5
output
50 Ω
MGK064
Dimensions in mm.
Substrate: Epsilam printed-circuit board.
Thickness: 0.635 mm.
Permittivity: ε_r = 10.
Fig.3 Wideband test circuit board for 1.4 to 1.8 GHz operation (PZ1418B30U).
1997 Feb 19
4