PZ1418B30U Datasheet, PDF (3/16 Pages) NXP Semiconductors – NPN microwave power transistors

Philips Semiconductors
NPN microwave power transistors
Product specification
PZ1418B30U; PZ1721B25U;
PZ2024B20U
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_CES
V_EBO
I_C
P_tot
T_stg
T_j
T_sld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
open emitter
open base
R_BE = 0 Ω
open collector
T_mb ≤ 75 °C
MIN.
−
−
−
−
−
−
−65
−
−
MAX.
40
15
35
3
4
45
+200
200
235
UNIT
V
V
V
V
A
W
°C
°C
°C
50
handbook,
Ptot
(W)
40
30
20
10
0
0
MGD970
50
100
150
200
Tmb (°C)
Fig.2 Power derating curve as a function of
mounting base temperature.
1997 Feb 19
3