PSMN9R8-30MLC_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

NXP Semiconductors
PSMN9R8-30MLC
N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
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60
g_fs
(S)
40
20
0
0
10
20
30
40
50
I_D (A)
50
I_D
(A)
40
30
20
10
0
0
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T_j = 150 °C
T_j = 25 °C
1
2
3
4
V_GS (V)
Fig 8. Forward transconductance as a function of
drain current; typical values
50
R_DSon
(mΩ)
40
2.8 3
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30
20
10
0
5
3.5
4.5
V_GS (V) =10
15
25
35
45 _ID(A) 55
Fig 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
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2
a
10V
1.5
V_GS=4.5V
1
0.5
0
-60
0
60
120
180
T_j (°C)
Fig 10. Drain-source on-state resistance as a function Fig 11. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
PSMN9R8-30MLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 15 June 2012
© NXP B.V. 2012. All rights reserved.
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