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| PSMN9R8-30MLC_15 Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology | |||
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NXP Semiconductors
PSMN9R8-30MLC
N-channel 30 V 9.8 m⦠logic level MOSFET in LFPAK33 using NextPower Technology
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGS(th)
âVGS(th)/âT
IDSS
gate-source threshold
voltage
gate-source threshold
voltage variation with
temperature
drain leakage current
IGSS
gate leakage current
RDSon
drain-source on-state
resistance
RG
gate resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
QGS(th)
QGS(th-pl)
QGD
VGS(pl)
Ciss
Coss
Crss
gate-source charge
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
Conditions
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 150 °C
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 15 A; Tj = 25 °C;
see Figure 10
VGS = 4.5 V; ID = 15 A; Tj = 150 °C;
see Figure 11; see Figure 10
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 10
VGS = 10 V; ID = 15 A; Tj = 150 °C;
see Figure 11; see Figure 10
f = 1 MHz
ID = 15 A; VDS = 15 V; VGS = 10 V;
see Figure 12; see Figure 13
ID = 15 A; VDS = 15 V; VGS = 4.5 V;
see Figure 12; see Figure 13
ID = 0 A; VDS = 0 V; VGS = 10 V
ID = 15 A; VDS = 15 V; VGS = 4.5 V;
see Figure 12; see Figure 13
ID = 15 A; VDS = 15 V;
see Figure 12; see Figure 13
VDS = 15 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
Min Typ Max Unit
30 -
-
V
27 -
-
V
1.3 1.64 1.95 V
-
-4
-
mV/K
-
-
1
µA
-
-
100 µA
-
-
100 nA
-
-
100 nA
-
10.65 12.4 mâ¦
-
-
21.1 mâ¦
-
8.5 9.8 mâ¦
-
-
16.75 mâ¦
0.9 1.8 3.6 â¦
-
10.9 -
nC
-
5
-
nC
-
10 -
nC
-
2
-
nC
-
1.2 -
nC
-
0.8 -
nC
-
1.5 -
nC
-
3.1 -
V
-
690 -
pF
-
170 -
pF
-
52 -
pF
PSMN9R8-30MLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 â 15 June 2012
© NXP B.V. 2012. All rights reserved.
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