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| PSMN9R8-30MLC_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology | |||
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NXP Semiconductors
PSMN9R8-30MLC
N-channel 30 V 9.8 m⦠logic level MOSFET in LFPAK33 using NextPower Technology
Table 6. Characteristics â¦continued
Symbol
Parameter
Conditions
td(on)
tr
td(off)
tf
Qoss
turn-on delay time
rise time
turn-off delay time
fall time
output charge
Source-drain diode
VDS = 15 V; RL = 1 â¦; VGS = 4.5 V;
RG(ext) = 5 â¦
VGS = 0 V; VDS = 15 V; f = 1 MHz;
Tj = 25 °C
VSD
source-drain voltage IS = 15 A; VGS = 0 V; Tj = 25 °C;
see Figure 15
trr
reverse recovery time IS = 15 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 15 V
ta
reverse recovery rise VGS = 0 V; IS = 15 A; dIS/dt = -100 A/µs;
time
VDS = 15 V; see Figure 16
tb
reverse recovery fall
time
Min Typ Max Unit
-
7.4 -
ns
-
7.7 -
ns
-
11.7 -
ns
-
5.3 -
ns
-
4.9 -
nC
-
0.84 1.1 V
-
12.9 -
ns
-
5.3 -
nC
-
7.9 -
ns
-
5
-
ns
50
ID
10 4.5
3.5
(A)
40
30
20
10
0
0
1
2
003aaj430
3
2.8
2.6
VGS (V) = 2.4
2.2
3
4
VDS(V)
30
RDSon
(mΩ)
20
003aaj431
10
0
0
4
8
12
16
VGS (V)
Fig 6. Output characteristics; drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
PSMN9R8-30MLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 â 15 June 2012
© NXP B.V. 2012. All rights reserved.
6 of 14
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