PSMN4R3-80PS_15 Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel 80 V, 4.3 m standard level MOSFET in TO220

NXP Semiconductors
PSMN4R3-80PS
N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220
Table 6. Characteristics …continued
Symbol
Parameter
Source-drain diode
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
[1] Measured 3 mm from package.
Conditions
I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
I_S = 25 A; dI_S/dt = 100 A/µs;
V_GS = 0 V; V_DS = 20 V
Min Typ Max Unit
-
-
1.2 V
-
59
-
ns
-
109 -
nC
250
g_fs
(S)
200
003aaf619
150
100
50
0
0
15
30
45
60
75
I_D (A)
80
I_D
(A)
60
40
20
0
0
003aaf620
T_j = 175 °C
T_j = 25 °C
2
4 _VGS(V) 6
Fig 5. Forward transconductance as a function of
drain current; typical values
25
R_DSon
(mΩ)
20
003aaf621
15
10
5
0
0
5
10
15
20
V_GS (V)
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
100
I_D
(A)
80
8.0 6.0
20.0
5.5
60
003aaf622
V_GS(V) = 4.5
40
4.4
20
4.2
4.0
0
0
0.5
1
1.5
V_DS(V)
Fig 7. Drain-source on-state resistance as a function Fig 8. Output characteristics: drain current as a
of gate-source voltage; typical values
function of drain-source voltage; typical values
PSMN4R3-80PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 18 April 2011
© NXP B.V. 2011. All rights reserved.
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