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| PSMN4R3-80PS_15 Datasheet, PDF (2/15 Pages) NXP Semiconductors – N-channel 80 V, 4.3 m standard level MOSFET in TO220 | |||
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NXP Semiconductors
PSMN4R3-80PS
N-channel 80 V, 4.3 m⦠standard level MOSFET in TO220
Table 1. Quick reference data â¦continued
Symbol Parameter
Conditions
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 75 A;
VDS = 40 V; see Figure 14;
see Figure 15
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C;
ID = 120 A; Vsup ⤠80 V;
RGS = 50 â¦; unclamped
[1] Continuous current is limited by package
[2] Measured 3 mm from package.
2. Pinning information
Min Typ Max Unit
-
28.4 -
nC
-
111 -
nC
-
-
676 mJ
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
gate
D
drain
S
source
D
drain
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78 (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
PSMN4R3-80PS
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
PSMN4R3-80PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 â 18 April 2011
© NXP B.V. 2011. All rights reserved.
2 of 15
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