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| PSMN4R3-80PS_15 Datasheet, PDF (6/15 Pages) NXP Semiconductors – N-channel 80 V, 4.3 m standard level MOSFET in TO220 | |||
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NXP Semiconductors
PSMN4R3-80PS
N-channel 80 V, 4.3 m⦠standard level MOSFET in TO220
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Static characteristics
V(BR)DSS
drain-source breakdown
ID = 250 µA; VGS = 0 V; Tj = -55 °C
73
voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
80
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 175 °C;
1
see Figure 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
-
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 25 °C;
2
see Figure 10; see Figure 11
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 80 V; VGS = 0 V; Tj = 25 °C
VDS = 80 V; VGS = 0 V; Tj = 175 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 12
-
-
-
-
[1] -
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 13
[1] -
VGS = 10 V; ID = 25 A; Tj = 100 °C;
see Figure 12
[1] -
RG
internal gate resistance (AC) f = 1 MHz
-
Dynamic characteristics
QG(tot)
QGS
QGS(th)
total gate charge
ID = 0 A; VDS = 0 V; VGS = 10 V
-
gate-source charge
ID = 75 A; VDS = 40 V; VGS = 10 V;
-
see Figure 14; see Figure 15
-
pre-threshold gate-source
-
charge
QGS(th-pl)
post-threshold gate-source
-
charge
QGD
VGS(pl)
gate-drain charge
-
gate-source plateau voltage ID = 25 A; VDS = 40 V; see Figure 14;
-
see Figure 15
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
input capacitance
output capacitance
VDS = 40 V; VGS = 0 V; f = 1 MHz;
-
Tj = 25 °C; see Figure 16
-
reverse transfer capacitance
-
turn-on delay time
rise time
VDS = 40 V; RL = 0.53 â¦; VGS = 10 V;
-
RG(ext) = 4.7 â¦; ID = 75 A
-
turn-off delay time
-
fall time
-
Typ Max Unit
-
-
V
-
-
V
-
-
V
-
4.6 V
3
4
V
0.02 10 µA
-
500 µA
-
100 nA
-
100 nA
8.9 10.3 mâ¦
3.7 4.3 mâ¦
6.1 7.1 mâ¦
0.9 -
â¦
104 -
nC
111 -
nC
38
-
nC
24.1 -
nC
14.1 -
nC
28.4 -
nC
6.1 -
V
8161 -
pF
701 -
pF
337 -
pF
38
-
ns
29 -
ns
94
-
ns
33
-
ns
PSMN4R3-80PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 â 18 April 2011
© NXP B.V. 2011. All rights reserved.
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