PSMN1R5-40ES_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel 40 V 1.6 m standard level MOSFET in I2PAK.

NXP Semiconductors
PSMN1R5-40ES
N-channel 40 V 1.6 mΩ standard level MOSFET in I2PAK.
8
R_DSon
(mΩ)
6
003aaf318
4
2
0
4
8
12
16
20
V_GS (V)
80
20 6.0 5.2 5.0
I_D
(A)
60
40
003aaf319
V_GS(V) = 4.8
4.7
4.6
20
0
0
4.5
0.25
0.5
0.75 _VDS(V) 1
Fig 7. Drain-source on-state resistance as a function Fig 8. Output characteristics: drain current as a
of gate-source voltage; typical values.
function of drain-source voltage; typical values
18000
C
(pF)
14000
003aaf320
C_iss
5
V_GS(th)
(V)
4
003aad280
max
10000
C_rss
6000
3
typ
2
min
1
2000
1
10
V_GS (V)
10²
0
−60
0
60
120
180
T_j (°C)
Fig 9. Input and reverse transfer capacitances as a
Fig 10. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
PSMN1R5-40ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 19 April 2011
© NXP B.V. 2011. All rights reserved.
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