PSMN1R5-40ES_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel 40 V 1.6 m standard level MOSFET in I2PAK.

PSMN1R5-40ES
N-channel 40 V 1.6 mΩ standard level MOSFET in I2PAK.
Rev. 01 — 19 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in I2PAK (SOT226) package qualified to 175 °C. This
product is designed and qualified for use in a wide range of industrial, communications
and domestic equipment.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Suitable for standard level gate drive
sources
1.3 Applications
„ DC-to-DC convertors
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1.
Symbol
V_DS
I_D
Quick reference data
Parameter
drain-source voltage
drain current
P_tot
total power dissipation
Static characteristics
R_DSon
drain-source on-state
resistance
Dynamic characteristics
Q_GD
Q_G(tot)
gate-drain charge
total gate charge
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
T_mb = 25 °C; V_GS = 10 V;
see Figure 1
T_mb = 25 °C; see Figure 2
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 13
V_GS = 10 V; I_D = 75 A;
V_DS = 20 V; see Figure 14;
see Figure 15
Min Typ Max Unit
-
-
40 V
[1] _-
-
120 A
-
-
338 W
[2] _-
1.3 1.6 mΩ
-
32 -
nC
-
136 -
nC
[1] Continuous current is limited by package
[2] Measured 3 mm from package.