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| PSMN1R5-40ES_15 Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel 40 V 1.6 m standard level MOSFET in I2PAK. | |||
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NXP Semiconductors
PSMN1R5-40ES
N-channel 40 V 1.6 m⦠standard level MOSFET in I2PAK.
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
VGS(th)
gate-source threshold voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
RG
internal gate resistance (AC)
Dynamic characteristics
QG(tot)
total gate charge
QGS
QGS(th)
QGS(th-pl)
QGD
VGS(pl)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
gate-source charge
pre-threshold gate-source
charge
post-threshold gate-source
charge
gate-drain charge
gate-source plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
Conditions
Min
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 11; see Figure 10
VDS = 40 V; VGS = 0 V; Tj = 25 °C
VDS = 40 V; VGS = 0 V; Tj = 175 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 100 °C;
see Figure 12
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 12
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 13
f = 1 MHz
36
40
-
1
2
-
-
-
-
-
-
[1] -
-
ID = 0 A; VDS = 0 V; VGS = 10 V;
-
see Figure 14; see Figure 15
ID = 75 A; VDS = 20 V; VGS = 10 V;
-
see Figure 14; see Figure 15
-
-
-
-
VDS = 20 V; see Figure 14;
-
see Figure 15
VDS = 20 V; VGS = 0 V; f = 1 MHz;
-
Tj = 25 °C; see Figure 16
-
-
VDS = 20 V; RL = 0.8 â¦; VGS = 10 V;
-
RG(ext) = 4.7 â¦
-
-
-
Typ Max Unit
-
-
V
-
-
V
-
4.6 V
-
-
V
3
4
V
0.02 10 µA
250 500 µA
2
100 nA
2
100 nA
1.9 2.3 mâ¦
2.6 3.2 mâ¦
1.3 1.6 mâ¦
1.1 -
â¦
133 -
nC
136 -
nC
52
-
nC
30
-
nC
22
-
nC
32 -
nC
6.1 -
V
9710 -
pF
2042 -
pF
994 -
pF
45
-
ns
66 -
ns
111 -
ns
53
-
ns
PSMN1R5-40ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 â 19 April 2011
© NXP B.V. 2011. All rights reserved.
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