PSMN050-80BS_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel 80 V 46 mΩ standard level MOSFET in D2PAK

NXP Semiconductors
PSMN050-80BS
N-channel 80 V 46 mΩ standard level MOSFET in D2PAK
100
R_DSon
(mΩ)
80
60
40
20
0
003aad054
5
10
15 _{VGS (V)} 20
40
003aad048
I_D
(A)
30
20
10
0
0
T_j = 175 °C
25 °C
2
4
6 _{VGS (V)} 8
Fig 9. Drain-source on-state resistance as a function Fig 10. Transfer characteristics: drain current as a
of gate-source voltage; typical values
function of gate-source voltage; typical values
10^−1
I_D
(A)
10^−2
03aa35
min typ max
5
V_GS(th)
(V)
4
003aad280
max
10^−3
10^−4
3
typ
2
min
10^−5
1
10^−6
0
2
4
6
V_GS (V)
0
−60
0
60
120
180
T_j (°C)
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
Fig 12. Gate-source threshold voltage as a function of
junction temperature
PSMN050-80BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 March 2012
© NXP B.V. 2012. All rights reserved.
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