PSMN050-80BS_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel 80 V 46 mΩ standard level MOSFET in D2PAK

NXP Semiconductors
PSMN050-80BS
N-channel 80 V 46 mΩ standard level MOSFET in D2PAK
Table 6. Characteristics …continued
Tested to JEDEC standards where applicable.
Symbol
Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 15 A; V_GS = 0 V; T_j = 25 °C;
see Figure 16
t_rr
reverse recovery time I_S = 50 A; dI_S/dt = 100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 40 V
Min Typ Max Unit
-
0.86 1.2 V
-
32 -
ns
-
28 -
nC
40
20 ¹⁰
I_D
8
(A)
6
30
20
10
003aad046
5.5
5
V_GS (V) = 4.5
100
R_DSon
(mΩ)
80
V_GS (V) = 5
60
40
003aad047
5.5
6
8
10
20
0
0
2
4
6
8
10
V_DS (V)
20
0
10
20
30 _{ID (A)} 40
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of drain current; typical values
1000
C
(pF)
C_iss
800
003aad052
600
C_rss
400
200
0
2
4
6
8 _{VGS (V)} 10
35
g_fs
(S)
30
25
20
15
10
5
0
0
003aad053
10
20
30
40 _{ID (A)} 50
Fig 7. Input and reverse transfer capacitances as a
Fig 8. Forward transconductance as a function of
function of gate-source voltage; typical values
drain current; typical values
PSMN050-80BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 March 2012
© NXP B.V. 2012. All rights reserved.
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