PSMN012-80BS_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel 80 V 11 mΩ standard level MOSFET in D2PAK

NXP Semiconductors
PSMN012-80BS
N-channel 80 V 11 mΩ standard level MOSFET in D2PAK
120
g_fs
(S)
100
80
60
40
20
0
0
20
40
003aad036
60
80 _{ID (A)} 100
25
R_DSon
(mΩ)
20
15
10
5
0
003aad038
5
10
15
20
V_GS (V)
Fig 9. Forward transconductance as a function of
drain current; typical values
10^−1
I_D
(A)
10^−2
03aa35
min typ max
10^−3
10^−4
10^−5
10^−6
0
2
4
6
V_GS (V)
Fig 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
5
V_GS(th)
(V)
4
003aad280
max
3
typ
2
min
1
0
−60
0
60
120
180
T_j (°C)
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
Fig 12. Gate-source threshold voltage as a function of
junction temperature
PSMN012-80BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 March 2012
© NXP B.V. 2012. All rights reserved.
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