PSMN012-80BS_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel 80 V 11 mΩ standard level MOSFET in D2PAK

NXP Semiconductors
PSMN012-80BS
N-channel 80 V 11 mΩ standard level MOSFET in D2PAK
250
I_D
(A)
200
150
100
50
0
0
10
7
6.5
003aad029
V_GS (V) = 15
6
5.5
5
4.5
2
4
6
8
10
V_DS (V)
25
5
5.5
6
R_DSon
(mΩ)
20
003aad030
10
7
15
10
V_GS (V) = 15
5
0
50
100
150
200
250
I_D (A)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of drain current; typical values
003aad031
003aad035
100
4000
I_D
C_iss
(A)
80
C
(pF)
60
3000
40
T_j = 175 °C
20
25 °C
0
0
1
2
3
4
5
6
V_GS (V)
C_rss
2000
2
4
6
8 _{VGS (V)} 10
Fig 7. Transfer characteristics: drain current as a
Fig 8. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
function of gate-source voltage; typical values
PSMN012-80BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 March 2012
© NXP B.V. 2012. All rights reserved.
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