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| PSMN012-80BS_15 Datasheet, PDF (2/14 Pages) NXP Semiconductors – N-channel 80 V 11 mΩ standard level MOSFET in D2PAK | |||
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NXP Semiconductors
PSMN012-80BS
N-channel 80 V 11 m⦠standard level MOSFET in D2PAK
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
gate
D
drain[1]
S
source
D
mounting base; connected to drain
[1] It is not possible to make connection to pin 2
Simplified outline
mb
2
13
SOT404 (D2PAK)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN012-80BS
D2PAK
4. Limiting values
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
Conditions
Tj ⥠25 °C; Tj ⤠175 °C
Tj ⥠25 °C; Tj ⤠175 °C; RGS = 20 kâ¦
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp ⤠10 µs; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp ⤠10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 74 A;
Vsup ⤠80 V; RGS = 50 â¦; unclamped
Min Max Unit
-
80 V
-
80 V
-20 20 V
-
52 A
-
74 A
-
295 A
-
148 W
-55 175 °C
-55 175 °C
-
260 °C
-
74 A
-
295 A
-
100 mJ
PSMN012-80BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 â 1 March 2012
© NXP B.V. 2012. All rights reserved.
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