PMPB15XP_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – 12 V, single P-channel Trench MOSFET

NXP Semiconductors
PMPB15XP
12 V, single P-channel Trench MOSFET
50
R_DSon
(mΩ)
40
30
20
10
aaa-004174
V_GS = -1.5 V
-1.7 V
-1.9 V
-1.6 V
-1.8 V
-2.0 V
-2.1 V
-2.5 V
-4.5 V
50
R_DSon
(mΩ)
40
30
20
10
aaa-004175
T_j = 150 °C
T_j = 25 °C
0
0
-5
T_j = 25 °C
-10
-15
-20
-25
I_D (A)
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
-25
I_D
(A)
-20
aaa-004176
0
0
-1
-2
-3
-4
-5
V_GS (V)
I_D = -8 A
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
1.4
aaa-004177
a
1.2
-15
1.0
-10
-5
T_j = 150 °C
T_j = 25 °C
0.8
0
0.0
-0.5
-1.0
V_DS > I_D × R_DSon
-1.5
-2.0
V_GS (V)
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.6
-60
0
60
120
180
T_j (°C)
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
PMPB15XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 November 2012
© NXP B.V. 2012. All rights reserved
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