PMPB15XP_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – 12 V, single P-channel Trench MOSFET

PMPB15XP
12 V, single P-channel Trench MOSFET
22 November 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
• 1.5 kV ESD protection (human body model)
• Trench MOSFET technology
• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
• Exposed drain pad for excellent thermal conduction
• Tin-plated 100 % solderable side pads for optical solder inspection
1.3 Applications
• Charging switch for portable devices
• DC-to-DC converters
• Power management in battery-driven portable devices
• Hard disk and computing power management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j = 25 °C
-
-
-12 V
V_GS
gate-source voltage
-12 -
12
V
I_D
drain current
V_GS = -4.5 V; T_amb = 25 °C; t ≤ 5 s
[1]
-
-
-11.8 A
Static characteristics
R_DSon
drain-source on-state V_GS = -4.5 V; I_D = -8.2 A; T_j = 25 °C
resistance
-
15
19
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm².
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