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PMPB15XP_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – 12 V, single P-channel Trench MOSFET
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NXP Semiconductors
PMPB15XP
12 V, single P-channel Trench MOSFET
Symbol
IGSS
RDSon
Parameter
gate leakage current
drain-source on-state
resistance
gfs
forward
transconductance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage
Conditions
VGS = -12 V; VDS = 0 V; Tj = 25 °C
VGS = 12 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; ID = -8.2 A; Tj = 25 °C
VGS = -4.5 V; ID = -8.2 A; Tj = 150 °C
VGS = -2.5 V; ID = -3.9 A; Tj = 25 °C
VGS = -1.8 V; ID = -3.9 A; Tj = 25 °C
VDS = -10 V; ID = -8.2 A; Tj = 25 °C
VDS = -6 V; ID = -8.2 A; VGS = -4.5 V;
Tj = 25 °C
VDS = -6 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = -6 V; ID = -8.2 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
IS = -1.9 A; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
-
-
-100 nA
-
-
-100 nA
-
15
19
mΩ
-
20
25
mΩ
-
17
20
mΩ
-
21
33
mΩ
-
40
-
S
-
67
100 nC
-
5.5 -
nC
-
7.3 -
nC
-
2875 -
pF
-
570 -
pF
-
530 -
pF
-
18
-
ns
-
90
-
ns
-
85
-
ns
-
57
-
ns
-
-0.6 -1.2 V
-25
ID -4.5 V
(A) -2.0 V
-20
-1.8 V
aaa-004172
VGS = -1.7 V
-1.6 V
-10-2
ID
(A)
-10-3
aaa-004173
-15
-1.5 V
-10-4
min
typ
max
-10
-1.4 V
-1.3 V
-10-5
-5
0
0
-1
Tj = 25 °C
-1.2 V
-2
-3
-4
VDS (V)
-10-6
0.0
-0.4
Tj = 25 °C; VDS = -5 V
-0.8
-1.2
VGS (V)
Fig. 6.
PMPB15XP
Output characteristics: drain current as a
Fig. 7. Subthreshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
22 November 2012
6 / 14
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