PMEG4002AESF_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – 40 V, 0.2 A low VF MEGA Schottky barrier rectifier

NXP Semiconductors
PMEG4002AESF
40 V, 0.2 A low VF MEGA Schottky barrier rectifier
1
I_F
(A)
(1)
(2)
10^-1 (3)
aaa-011755
10^-2
(4)
(5)
10^-3
10^-4
0
0.4
pulsed condition
(1) T_j = 150 °C
(2) T_j = 125 °C
(3) T_j = 85 °C
(4) T_j = 25 °C
(5) T_j = −40 °C
0.8
1.2
V_F (V)
Fig. 4. Forward current as a function of forward
voltage; typical values
35
C_d
(pF)
30
aaa-011757
25
20
15
10
5
0
0
10
20
f = 1 MHz; T_amb = 25 °C
30
40
V_R (V)
Fig. 6. Diode capacitance as a function of reverse
voltage; typical values
10^-1
I_R
(A) _10-2
10^-3
10^-4
aaa-011756
(1)
(2)
(3)
10^-5
(4)
10^-6
10^-7
10^-8
(5)
10^-9
0
10
20
pulsed condition
(1) T_j = 150 °C
(2) T_j = 125 °C
(3) T_j = 85 °C
(4) T_j = 25 °C
(5) T_j = −40 °C
30
40
V_R (V)
Fig. 5. Reverse current as a function of reverse
voltage; typical values
0.16
P_F(AV)
(W)
0.12
aaa-011758
(4)
(3)
(2)
(1)
0.08
0.04
0
0
0.1
T_j = 150 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
0.2
0.3
I_F(AV) (A)
Fig. 7.
Average forward power dissipation as a
function of average forward current; typical
values
PMEG4002AESF
Product data sheet
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6 February 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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