PMEG4002AESF_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – 40 V, 0.2 A low VF MEGA Schottky barrier rectifier

PMEG4002AESF
40 V, 0.2 A low VF MEGA Schottky barrier rectifier
6 February 2015
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with
an integrated guard ring for stress protection in a DSN0603-2 (SOD962-2) leadless ultra
small Chip-Scale Package (CSP).
2. Features and benefits
• Average forward current I_F(AV) ≤ 0.2 A
• Reverse voltage V_R ≤ 40 V
• Low forward voltage typ. V_F = 250 mV
• Low reverse current typ. I_R = 3 µA
• Package height typ. 0.3 mm
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Ultra high speed switching
• LED backlight for mobile application
4. Quick reference data
Table 1.
Symbol
I_F(AV)
V_R
V_F
I_R
t_rr
Quick reference data
Parameter
Conditions
average forward
current
δ = 0.5; f = 20 kHz; T_amb ≤ 140 °C;
square wave
δ = 0.5; f = 20 kHz; T_sp ≤ 147 °C;
square wave
reverse voltage
T_j = 25 °C
forward voltage
I_F = 10 mA; t_p ≤ 300 µs; δ ≤ 0.02;
T_j = 25 °C
reverse current
V_R = 10 V; T_j = 25 °C; pulsed
reverse recovery time I_F = 500 mA; I_R = 500 mA;
I_R(meas) = 100 mA; T_j = 25 °C
Min Typ Max Unit
[1]
-
-
0.2 A
-
-
0.2 A
-
-
40
V
-
250 320 mV
-
3
20
µA
-
1.25 -
ns
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.
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