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| PMEG4002AESF_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – 40 V, 0.2 A low VF MEGA Schottky barrier rectifier | |||
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NXP Semiconductors
PMEG4002AESF
40 V, 0.2 A low VF MEGA Schottky barrier rectifier
10. Characteristics
Table 7.
Symbol
V(BR)R
VF
IR
Cd
trr
Characteristics
Parameter
Conditions
reverse breakdown
voltage
IR = 100 µA; tp = 300 µs; δ = 0.02;
Tsp = 25 °C
forward voltage
IF = 0.1 mA; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C
IF = 1 mA; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C
IF = 10 mA; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C
IF = 100 mA; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C
IF = 200 mA; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C
reverse current
VR = 10 V; Tj = 25 °C; pulsed
VR = 40 V; Tj = 25 °C; pulsed
diode capacitance
VR = 1 V; f = 1 MHz; Tj = 25 °C
VR = 10 V; f = 1 MHz; Tj = 25 °C
reverse recovery time IF = 500 mA; IR = 500 mA;
IR(meas) = 100 mA; Tj = 25 °C
Min Typ Max Unit
40
-
-
V
-
120 185 mV
-
180 245 mV
-
250 320 mV
-
370 440 mV
-
450 525 mV
-
3
20
µA
-
13
80
µA
-
18
-
pF
-
7
-
pF
-
1.25 -
ns
PMEG4002AESF
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 February 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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