PHPT60415NY_15 Datasheet, PDF (7/17 Pages) NXP Semiconductors – 40 V, 15 A NPN high power bipolar transistor

NXP Semiconductors
PHPT60415NY
40 V, 15 A NPN high power bipolar transistor
Symbol
f_T
C_c
Parameter
transition frequency
collector capacitance
Conditions
V_CE = 10 V; I_C = 500 mA; f = 100 MHz;
T_amb = 25 °C
V_CB = 10 V; I_E = 0 A; i_e = 0 A;
f = 1 MHz; T_amb = 25 °C
Min Typ Max Unit
-
105 -
MHz
-
90
-
pF
800
h_FE
600
400
200
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(1)
(2)
(3)
0
10^-1
1
10
10² 10³ 10⁴ 10⁵
I_C (mA)
V_CE = 2 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig. 4. DC current gain as a function of collector
current; typical values
18
I_C
(A)
12
I_B = 150 mA
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110 mA
80 mA
60 mA
40 mA
30 mA
6
20 mA
15 mA
10 mA
5 mA
0
0
1
2
3
4
5
V_CE (V)
T_amb = 25 °C
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
PHPT60415NY
Product data sheet
All information provided in this document is subject to legal disclaimers.
27 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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