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PHPT60415NY_15 Datasheet, PDF (6/17 Pages) NXP Semiconductors – 40 V, 15 A NPN high power bipolar transistor
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NXP Semiconductors
PHPT60415NY
40 V, 15 A NPN high power bipolar transistor
10. Characteristics
Table 7.
Symbol
ICBO
ICES
IEBO
hFE
VCEsat
RCEsat
VBEsat
VBEon
td
tr
ton
ts
tf
toff
Characteristics
Parameter
Conditions
collector-base cut-off
current
VCB = 32 V; IE = 0 A; Tamb = 25 °C
VCB = 32 V; IE = 0 A; Tj = 150 °C
collector-emitter cut-off VCE = 32 V; VBE = 0 V; Tamb = 25 °C
current
emitter-base cut-off
current
VEB = 7 V; IC = 0 A; Tamb = 25 °C
DC current gain
VCE = 2 V; IC = 500 mA; Tamb = 25 °C
VCE = 2 V; IC = 1 A; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
collector-emitter
saturation voltage
VCE = 2 V; IC = 10 A; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
VCE = 2 V; IC = 15 A; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C; pulsed
IC = 1 A; IB = 50 mA; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C; pulsed
collector-emitter
saturation resistance
IC = 10 A; IB = 1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
IC = 15 A; IB = 1.5 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = 15 A; IB = 1.5 A; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C; pulsed
base-emitter saturation IC = 1 A; IB = 50 mA; pulsed;
voltage
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = 10 A; IB = 1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
IC = 15 A; IB = 1.5 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
base-emitter turn-on
voltage
VCE = 2 V; IC = 500 mA; Tamb = 25 °C
delay time
rise time
VCC = 12.5 V; IC = 8 A; IBon = 250 mA;
IBoff = -250 mA; Tamb = 25 °C
turn-on time
storage time
fall time
turn-off time
PHPT60415NY
Product data sheet
All information provided in this document is subject to legal disclaimers.
27 May 2015
Min Typ Max Unit
-
-
100 nA
-
-
50
µA
-
-
100 nA
-
-
100 nA
250 410 -
250 400 -
100 160 -
50
80
-
-
28
40
mV
-
250 400 mV
-
420 600 mV
-
28
40
mΩ
-
-
1
V
-
-
1.35 V
-
-
1.5 V
-
-
0.8 V
-
20
-
ns
-
215 -
ns
-
235 -
ns
-
290 -
ns
-
125 -
ns
-
415 -
ns
© NXP Semiconductors N.V. 2015. All rights reserved
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