PHPT60415NY_15 Datasheet, PDF (1/17 Pages) NXP Semiconductors – 40 V, 15 A NPN high power bipolar transistor

PHPT60415NY
40 V, 15 A NPN high power bipolar transistor
27 May 2015
Product data sheet
1. General description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted
Device (SMD) power plastic package.
PNP complement: PHPT60415PY
2. Features and benefits
• High thermal power dissipation capability
• High temperature applications up to 175 °C
• Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation
• AEC-Q101 qualified.
3. Applications
• Power management
• Load switch
• Linear mode voltage regulator
• Backlighting applications
• Motor drive
• Relay replacement
4. Quick reference data
Table 1.
Symbol
V_CEO
I_C
I_CM
R_CEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current
collector-emitter
saturation resistance
single pulse; t_p ≤ 1 ms
I_C = 15 A; I_B = 1.5 A; t_p ≤ 300 µs;
δ ≤ 0.02; T_amb = 25 °C; pulsed
Min Typ Max Unit
-
-
40
V
-
-
15
A
-
-
30
A
-
28
40
mΩ
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