PHP27NQ11T Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
PHP27NQ11T
N-channel TrenchMOS™ standard level FET
5
V_GS(th)
(V)
4
3
03aa32
max
typ
10^-1
I_D
(A)
10^-2
10^-3
03aa35
min typ max
2
min
10^-4
1
10^-5
0
-60
0
60
120
180
T_j (°C)
10^-6
0
2
4
6
V_GS (V)
I_D = 1 mA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
T_j = 25 °C; V_DS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
104
C
(pF)
103
03ao66
Ciss
Coss
102
Crss
10
10-1
1
10
102
VDS (V)
V_GS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 13183
Product data
Rev. 01 — 17 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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