PHP27NQ11T Datasheet, PDF (3/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
120
P_der
(%)
80
03aa16
PHP27NQ11T
N-channel TrenchMOS™ standard level FET
120
I_der
(%)
80
03aa24
40
40
0
0
50
100
150
200
T_mb (°C)
P_der = _P-------^P----^t--^o---^t------- × 100%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
103
ID
(A)
102
Limit RDSon = VDS / ID
10
DC
1
0
0
50
100
150
200
T_mb (°C)
I_der = -_I-------^I--^D--------- × 100%
D ( 25 ^°C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03ao61
tp = 10 µ s
100 µ s
1 ms
10 ms
100 ms
10-1
1
10
102
103
VDS (V)
T_mb = 25 °C; I_DM is single pulse; V_GS = 10 V.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 13183
Product data
Rev. 01 — 17 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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