PHP27NQ11T Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
PHP27NQ11T
N-channel TrenchMOS™ standard level FET
20
ID
VGS = 10 V 6 V
(A)
8V
15
10
5
0
0
0.5
1
03ao62
Tj = 25 °C
5V
4.8 V
4.6 V
4.4 V
4.2 V
4V
1.5
2
VDS (V)
30
ID
(A)
VDS > ID x RDSon
20
03ao64
10
0
0
175 °C
Tj = 25 °C
2
4
6
VGS (V)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 175 °C; V_DS > I_D x R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03ao63
3
0.2
4.2 V 4.6 V 4.8 V
RDSon
(Ω)
4.4 V
VGS = 5 V
Tj = 25 °C
a
0.15
2
03aa29
0.1
0.05
0
0
5
T_j = 25 °C
6V
8 V 10 V
10
15
20
ID (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
1
0
-60
0
60
120
180
T_j (°C)
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 13183
Product data
Rev. 01 — 17 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
6 of 12