BUK755R4-100E_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK755R4-100E
N-channel TrenchMOS standard level FET
400
I_D
(A)
300
200
100
003aaf635
T_j = 175 °C
T_j = 25 °C
5
V_GS(th)
(V)
4
3
2
1
003aah027
max
typ
min
0
0
2
4
6
8
V_GS (V)
Fig. 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
-60
0
60
120
180
T_j (°C)
Fig. 9. Gate-source threshold voltage as a function of
junction temperature
10^-1
I_D
(A)
10^-2
10^-3
10^-4
10^-5
003aah028
min
typ max
15
R_DSon
4.5
5
(mΩ)
10
5
003aai255
5.5
6
7
V_GS(V) = 10
10^-6
0
2
4
6
V_GS(V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
0
0
120
240 _ID(A) 360
T_j = 25 °C; t_p = 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
BUK755R4-100E
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 September 2012
© NXP B.V. 2012. All rights reserved
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